Catalyst-free growth of indium nitride nanorods by chemical-beam epitaxy
- Department of Electrical Engineering, National Central University, Chungli, Taiwan, 320 (China)
We demonstrate the growth of indium nitride (InN) nanorods on sapphire by chemical-beam epitaxy without a catalyst. The nanorods are synthesized nearly unidirectionally along the <001> direction and the diameters varied in the range of 20-40 nm with In/N flow ratio. Single-crystalline wurtzite structure is verified by x-ray diffraction and transmission electron microscopy. Raman measurements show that these wurtzite InN nanorods have sharp peaks E{sub 2} (high) at 491 cm{sup -1} and A{sub 1} (LO) at 593 cm{sup -1}.
- OSTI ID:
- 20779390
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 88; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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