Defect-controlled growth of GaN nanorods on (0001)sapphire by molecular beam epitaxy
- Department of Physics, University of Bristol, Tyndall Avenue, Bristol BS8 1TL (United Kingdom)
- Department of Physics and Astronomy, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
Transmission electron microscopy is used to reveal threading defects in single crystal c-oriented GaN nanorods grown on (0001)sapphire by molecular beam epitaxy. The defects are shown to be planar faults lying on (1010) planes and bounded by opposite partial screw dislocations with Burgers vectors of 1/2<0001>. The faults nucleate, as dislocation half-loops, from points close to the GaN/(0001)sapphire interface. It is proposed that the spiral growth of the partial atomic step joining the emerging dislocations controls nanorod growth and accounts for the growth surface morphology. The significance of these defects for nanorod growth and applications is discussed.
- OSTI ID:
- 21175583
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 93; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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