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Title: Growth and morphology of 0.80 eV photoemitting indium nitride nanowires

Abstract

InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has themore » smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices.« less

Authors:
; ; ; ; ; ;
Publication Date:
Research Org.:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Org.:
USDOE Director. Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)
OSTI Identifier:
836678
Report Number(s):
LBNL-56167
R&D Project: 513350; TRN: US200504%%238
DOE Contract Number:  
AC03-76SF00098
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 23; Other Information: Submitted to Applied Physics Letters: Volume 85, No.23; Journal Publication Date: 12/06/2004; PBD: 13 Aug 2004
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; 36 MATERIALS SCIENCE; ALLOYS; AMMONIA; ELECTRONS; INDIUM; INDIUM NITRIDES; MONOCRYSTALS; MORPHOLOGY; NITRIDES; PHOTOLUMINESCENCE; SCANNING ELECTRON MICROSCOPY; SOLAR CELLS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Johnson, M.C., Lee, C.J., Bourret-Courchesne, E.D., Konsek, S.L., Aloni, S., Han, W.Q., and Zettl, A. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires. United States: N. p., 2004. Web. doi:10.1063/1.1831563.
Johnson, M.C., Lee, C.J., Bourret-Courchesne, E.D., Konsek, S.L., Aloni, S., Han, W.Q., & Zettl, A. Growth and morphology of 0.80 eV photoemitting indium nitride nanowires. United States. doi:10.1063/1.1831563.
Johnson, M.C., Lee, C.J., Bourret-Courchesne, E.D., Konsek, S.L., Aloni, S., Han, W.Q., and Zettl, A. Fri . "Growth and morphology of 0.80 eV photoemitting indium nitride nanowires". United States. doi:10.1063/1.1831563. https://www.osti.gov/servlets/purl/836678.
@article{osti_836678,
title = {Growth and morphology of 0.80 eV photoemitting indium nitride nanowires},
author = {Johnson, M.C. and Lee, C.J. and Bourret-Courchesne, E.D. and Konsek, S.L. and Aloni, S. and Han, W.Q. and Zettl, A.},
abstractNote = {InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported for the first time. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. The group-III nitrides have become an extremely important technological material over the past decade. They are commonly used in optoelectronic devices, such as high brightness light-emitting diodes (LEDs) and low wavelength laser diodes (LDs), as well as high power/high frequency electronic devices. Recently InN thin films grown by MOCVD and MBE were found to have a bandgap energy in the range of 0.7-0.9 eV, much lower than the value of {approx}1.9 eV found for InN films grown by sputtering. This large decrease in the direct bandgap transition energy and the ability to form ternary (InGaN) and quaternary (AlInGaN) alloys increases the versatility of group-III nitride optoelectronic devices, ranging from the near IR to the UV. Additionally, InN has some promising transport and electronic properties. It has the smallest effective electron mass of all the group-III nitrides which leads to high mobility and high saturation velocity10 and a large drift velocity at room temperature. As a result of these unique properties, there has been a large increase in interest in InN for potential use in optoelectronic devices, such as LDs and high efficiency solar cells, as well as high frequency/high power electronic devices.},
doi = {10.1063/1.1831563},
journal = {Applied Physics Letters},
number = 23,
volume = 85,
place = {United States},
year = {2004},
month = {8}
}