Universal bandgap bowing in group III nitride alloys
Journal Article
·
· Solid State Communications
OSTI ID:835986
- LBNL Library
The energy gaps of MBE-grown wurtzite-structure In{sub 1-x}Al{sub x}N alloys with x {le} 0.25 have been measured by absorption and photoluminescence experiments. The results are consistent with the recent discovery of a narrow bandgap of {approx}0.8 eV for InN. A bowing parameter of 3 eV was determined from the composition dependence of these bandgaps. Combined with previously reported data of InGaN and AlGaN, these results show a universal relationship between the bandgap variations of group III nitride alloys and their compositions.
- Research Organization:
- Ernest Orlando Lawrence Berkeley National Laboratory, Berkeley, CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science. Office of Basic Energy Sciences. Materials Science and Engineering Division (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 835986
- Report Number(s):
- LBNL--51260
- Journal Information:
- Solid State Communications, Journal Name: Solid State Communications Journal Issue: 6 Vol. 127
- Country of Publication:
- United States
- Language:
- English
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