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Long mean free paths of room-temperature THz acoustic phonons in a high thermal conductivity material

Journal Article · · Physical Review B
 [1];  [2];  [3];  [4];  [4];  [4];  [5];  [3];  [1]
  1. National Taiwan Univ., Taipei (Taiwan)
  2. Oak Ridge National Lab. (ORNL), Oak Ridge, TN (United States)
  3. Massachusetts Inst. of Technology (MIT), Cambridge, MA (United States)
  4. Univ. of Houston, Houston, TX (United States)
  5. Univ. of Houston, Houston, TX (United States); Academia Sinica, Taipei (Taiwan)
+ Show Author Affiliations

We report measurements of room-temperature mean free paths of long-lived THz acoustic phonons in wurtzite GaN. Longitudinal phonon wave packets are excited and probed by femtosecond laser pulses in two InGaN-GaN multiple quantum well structures separated by a GaN layer. By measuring the temperature dependence of the phonon attenuation in the range 80–300 K we isolate the intrinsic phonon mean free path at 300 K which is found to be 5.3 and 3.5 μm at 1.06 and 1.43 THz, respectively. The measurements are found to be in good agreement with ab initio calculations which show that the main channel of the acoustic phonon decay is a three-phonon scattering process involving the acoustic phonon and two high-frequency optical phonons. Here, our results indicate that the contribution of low-THz acoustic phonons to thermal transport in GaN is relatively smaller than in Si; thus finite size effects are expected to be less important in GaN.

Research Organization:
Oak Ridge National Laboratory (ORNL), Oak Ridge, TN (United States)
Sponsoring Organization:
USDOE Office of Science (SC), Basic Energy Sciences (BES) (SC-22)
Grant/Contract Number:
AC05-00OR22725
OSTI ID:
1560498
Alternate ID(s):
OSTI ID: 1560312
Journal Information:
Physical Review B, Journal Name: Physical Review B Journal Issue: 9 Vol. 100; ISSN 2469-9950; ISSN PRBMDO
Publisher:
American Physical Society (APS)Copyright Statement
Country of Publication:
United States
Language:
English

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