Influence of substrate orientation on the structural properties of GaAs nanowires in MOCVD

Journal Article · Tue Apr 19 04:00:00 EDT 2016 · AIP Conference Proceedings

DOI:https://doi.org/10.1063/1.4945503· OSTI ID:22591149

In this study, the effect of substrate orientation on the structural properties of GaAs nanowires grown by a metal organic chemical vapor deposition has been investigated. Gold colloids were used as catalyst to initiate the growth of nanowiresby the vapour-liquid-solid (VLS) mechanism. From the field-emission scanning electron microscopy (FE-SEM), the growth of the nanowires were at an elevation angle of 90°, 60°, 65° and 35° with respect to the GaAs substrate for (111)B, (311)B, (110) and (100) orientations respectively. The preferential NW growth direction is always <111>B. High-resolution transmission electron microscope (HRTEM) micrograph showed the NWs that grew on the GaAs(111)B has more structural defects when compared to others. Energy dispersive X-ray analysis (EDX) indicated the presence of Au, Ga and As. The bigger diameter NWs dominates the (111)B substrate surface.

• OSTI ID: 22591149
• Journal Information: AIP Conference Proceedings, Journal Name: AIP Conference Proceedings Journal Issue: 1 Vol. 1725; ISSN 0094-243X; ISSN APCPCS
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
77 NANOSCIENCE AND NANOTECHNOLOGY
CATALYSTS
CHEMICAL VAPOR DEPOSITION
COLLOIDS
COMPARATIVE EVALUATIONS
CRYSTAL GROWTH
CRYSTAL STRUCTURE
FIELD EMISSION
GALLIUM ARSENIDES
GOLD
LIQUIDS
NANOWIRES
ORGANOMETALLIC COMPOUNDS
SCANNING ELECTRON MICROSCOPY
SOLIDS
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY