Comparison of low frequency charge noise in identically patterned Si/SiO{sub 2} and Si/SiGe quantum dots
- Department of Physics and Astronomy, University of California Los Angeles, Los Angeles, California 90095 (United States)
We investigate and compare the charge noise in Si/SiO{sub 2} and Si/SiGe gate defined quantum dots with identically patterned gates by measuring the low frequency 1/f current noise through the biased quantum dots in the coulomb blockade regime. The current noise is normalized and used to extract a measurement of the potential energy noise in the system. Additionally, the temperature dependence of this noise is investigated. The measured charge noise in Si/SiO{sub 2} compares favorably with that of the SiGe device as well as previous measurements made on other substrates suggesting Si/SiO{sub 2} is a potential candidate for spin based quantum computing.
- OSTI ID:
- 22590827
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 25 Vol. 108; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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