Charge noise analysis of metal oxide semiconductor dual-gate Si/SiGe quantum point contacts

Journal Article · Wed May 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4878979· OSTI ID:22304351

Kamioka, J.; Oda, S. ^[1]; Takeda, K.; Obata, T. ^[2]; Tarucha, S. ^[2]

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1. Quantum Nanoelectronics Research Center, Tokyo Institute of Technology, 2-12-1-S9-11, Ookayama, Meguro-ku, Tokyo, 152-8552 (Japan)
2. Department of Applied Physics, School of Engineering, The University of Tokyo, 7-3-1, Hongo, Bunkyo-ku, Tokyo 113-8656 (Japan)

The frequency dependence of conductance noise through a gate-defined quantum point contact fabricated on a Si/SiGe modulation doped wafer is characterized. The 1/f{sup 2} noise, which is characteristic of random telegraph noise, is reduced by application of a negative bias on the global top gate to reduce the local gate voltage. Direct leakage from the large global gate voltage also causes random telegraph noise, and therefore, there is a suitable point to operate quantum dot measurement.

• OSTI ID: 22304351
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 20 Vol. 115; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC CONTACTS
FREQUENCY DEPENDENCE
GERMANIUM ALLOYS
GERMANIUM SILICIDES
MODULATION
MOS TRANSISTORS
NOISE
OXIDES
QUANTUM DOTS
RANDOMNESS
SEMICONDUCTOR MATERIALS
SILICON
SILICON ALLOYS