Sub-wavelength InAs quantum dot micro-disk lasers epitaxially grown on exact Si (001) substrates

Journal Article · Mon May 30 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4952600· OSTI ID:22590718

Wan, Yating; Li, Qiang; Liu, Alan Y. ^[1]; Chow, Weng W. ^[2]; Gossard, Arthur C.; Bowers, John E. ^[1]; Hu, Evelyn L. ^[3]

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1. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1086 (United States)
3. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

Subwavelength micro-disk lasers (MDLs) as small as 1 μm in diameter on exact (001) silicon were fabricated using colloidal lithography. The micro-cavity gain medium incorporating five-stacked InAs quantum dot layers was grown on a high crystalline quality GaAs-on-V-grooved-Si template with no absorptive intermediate buffers. Under continuous-wave optical pumping, the MDLs on silicon exhibit lasing in the 1.2-μm wavelength range with low thresholds down to 35 μW at 10 K. The MDLs compare favorably with devices fabricated on native GaAs substrates and state-of-the-art work reported elsewhere. Feasibility of device miniaturization can be projected by size-dependent lasing characteristics. The results show a promising path towards dense integration of photonic components on the mainstream complementary metal–oxide–semiconductor platform.

• OSTI ID: 22590718
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 22 Vol. 108; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EPITAXY
EQUIPMENT
GAIN
GALLIUM ARSENIDES
INDIUM ARSENIDES
LANTHANUM SELENIDES
LASERS
MINIATURIZATION
OPTICAL PUMPING
QUANTUM DOTS
SUBSTRATES
WAVELENGTHS