Temperature characteristics of epitaxially grown InAs quantum dot micro-disk lasers on silicon for on-chip light sources

Journal Article · Mon Jul 04 04:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4955456· OSTI ID:22590576

Wan, Yating; Li, Qiang; Liu, Alan Y. ^[1]; Gossard, Arthur C.; Bowers, John E. ^[1]; Hu, Evelyn L. ^[2]

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1. Materials Department, University of California Santa Barbara, Santa Barbara, California 93106 (United States)
2. School of Engineering and Applied Sciences, Harvard University, Cambridge, Massachusetts 02138 (United States)

Temperature characteristics of optically pumped micro-disk lasers (MDLs) incorporating InAs quantum dot active regions are investigated for on-chip light sources. The InAs quantum dot MDLs were grown on V-groove patterned (001) silicon, fully compatible with the prevailing complementary metal oxide-semiconductor technology. By combining the high-quality whispering gallery modes and 3D confinement of injected carriers in quantum dot micro-disk structures, we achieved lasing operation from 10 K up to room temperature under continuous optical pumping. Temperature dependences of the threshold, lasing wavelength, slope efficiency, and mode linewidth are examined. An excellent characteristic temperature T{sub o} of 105 K has been extracted.

• OSTI ID: 22590576
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 109; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
EPITAXY
INDIUM ARSENIDES
LANTHANUM SELENIDES
LASERS
LIGHT SOURCES
LINE WIDTHS
OPTICAL PUMPING
QUANTUM DOTS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K
TEMPERATURE RANGE 0065-0273 K
TEMPERATURE RANGE 0273-0400 K