Boost up the electrical performance of InGaZnO thin film transistors by inserting an ultrathin InGaZnO:H layer

Journal Article · Mon May 23 00:00:00 EDT 2016 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4952445· OSTI ID:22590713

Abliz, Ablat; Wang, Jingli; Xu, Lei; Wan, Da; Liao, Lei; Liu, Chuansheng; Jiang, Changzhong ^[1]; Ye, Cong ^[2]; Chen, Huipeng; Guo, Tailiang ^[3]

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1. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education, Wuhan University, Wuhan 430072 (China)
2. Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062 (China)
3. Institute of Optoelectronic Display, Fuzhou University, Fuzhou 350002 (China)

This study examined the electrical performance of bilayer channel InGaZnO:H/InGaZnO thin-film transistors (TFTs). The field-effect mobility and bias stress stability of the InGaZnO device were improved by inserting the hydrogenated InGaZnO ultrathin layer compared to the pure InGaZnO single channel layer device. As a consequence, a high field-effect mobility of 55.3 cm{sup 2}/V s, a high on/off current ratio of 10{sup 8}, a threshold voltage of 0.7 V, and a small sub-threshold swing of 0.18 V/decade have been achieved. The X-ray photoelectron spectroscopy and low-frequency noise analysis suggest that these desirable properties should be attributed to the ultrathin InGaZnO:H layer, which could provide suitable carrier concentration and reduce the average trap density near the channel and insulator layer interface. Meanwhile, the channel conductance of the bilayer device is controlled by thick InGaZnO layer through formation barrier energy for electron transport at the interface of InGaZnO:H and InGaZnO layer. These improved electrical properties have represented a great step towards the achievement of transparent, high performances, and low-cost metal oxide TFTs.

• OSTI ID: 22590713
• Journal Information: Applied Physics Letters, Vol. 108, Issue 21; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ABUNDANCE
DENSITY
ELECTRIC POTENTIAL
ELECTRICAL PROPERTIES
EQUIPMENT
LAYERS
OXIDES
PERFORMANCE
STRESSES
THIN FILMS
TRANSISTORS
TRAPS
X-RAY PHOTOELECTRON SPECTROSCOPY