Indium tin oxide/InGaZnO bilayer stacks for enhanced mobility and optical stability in amorphous oxide thin film transistors

Journal Article · Mon Jul 07 00:00:00 EDT 2014 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4889856· OSTI ID:22303963

Chung, Yoon Jang ^[1]; Kim, Un Ki; Hwang, Eun Suk

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1. Department of Materials Science and Engineering and Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-742 (Korea, Republic of)

Optically more stable, high mobility InGaZnO thin film transistors were fabricated by implementing ultrathin In{sub 2}O{sub 3}-SnO{sub 2} (ITO) layers at the gate dielectric/semiconductor interface. The optimized device portrayed a high saturation mobility of ∼80 cm{sup 2}/V s with off current values lower than 10{sup −11}A. The ITO layer also acted as a hole filter layer, and hole current and threshold voltage shift values measured under negative bias illumination conditions showed that a significant amount of photo-generated charge carriers were annihilated before reaching the gate insulator. This effect was more evident at larger intensities, showing threshold voltage shift values reduced by more than ∼70% under stress conditions.

• OSTI ID: 22303963
• Journal Information: Applied Physics Letters, Vol. 105, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CARRIER MOBILITY
CHARGE CARRIERS
CURRENTS
DIELECTRIC MATERIALS
FILTERS
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
INDIUM OXIDES
INTERFACES
LAYERS
SATURATION
SEMICONDUCTOR MATERIALS
STABILITY
STRESSES
THIN FILMS
TIN OXIDES
TRANSISTORS
ZINC OXIDES