Nitrogenated amorphous InGaZnO thin film transistor

Journal Article · Mon Jan 31 04:00:00 EST 2011 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.3551537· OSTI ID:21518271

Liu, Po-Tsun; Shieh, Han-Ping ^[1]; Chou, Yi-Teh; Teng, Li-Feng; Li, Fu-Hai ^[2]

---

1. Department of Photonics and Display Institute, National Chiao Tung University, CPT Building, Room 412, 1001 Ta-Hsueh Rd., Hsinchu 30010, Taiwan (China)
2. Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementing a nitrogen doping process.

• OSTI ID: 21518271
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 98; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ARGON
CARRIER MOBILITY
DEPOSITION
ELEMENTS
EQUIPMENT
FILMS
FLUIDS
GALLIUM COMPOUNDS
GASES
INDIUM COMPOUNDS
LAYERS
MATERIALS
MOBILITY
NITROGEN
NONMETALS
OXYGEN COMPOUNDS
RARE GASES
RELIABILITY
SEMICONDUCTOR DEVICES
SEMICONDUCTOR MATERIALS
SPUTTERING
STABILITY
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THIN FILMS
TRANSISTORS
ZINC COMPOUNDS