Conduction band edge effective mass of La-doped BaSnO{sub 3}
- Physics Department, University of California, Santa Barbara, California 93106-5100 (United States)
- Materials Department, University of California, Santa Barbara, California 93106-5050 (United States)
BaSnO{sub 3} has attracted attention as a promising material for applications requiring wide band gap, high electron mobility semiconductors, and moreover possesses the same perovskite crystal structure as many functional oxides. A key parameter for these applications and for the interpretation of its properties is the conduction band effective mass. We measure the plasma frequency of La-doped BaSnO{sub 3} thin films by glancing incidence, parallel-polarized resonant reflectivity. Using the known optical dielectric constant and measured electron density, the resonant frequency determines the band edge electron mass to be 0.19 ± 0.01. The results allow for testing band structure calculations and transport models.
- OSTI ID:
- 22590643
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 25; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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