Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1

Prakash, Abhinav; Xu, Peng; Faghaninia, Alireza; Shukla, Sudhanshu; Ager, Joel W.; Lo, Cynthia S.; Jalan, Bharat

doi:10.1038/ncomms15167

Title: Wide bandgap BaSnO₃ films with room temperature conductivity exceeding 10⁴ S cm^-1

Journal Article · Fri May 05 00:00:00 EDT 2017 · Nature Communications

DOI:https://doi.org/10.1038/ncomms15167· OSTI ID:1379840

^[1]; Xu, Peng ^[1]; Faghaninia, Alireza ^[2]; Shukla, Sudhanshu ^[3]; Ager, Joel W. ^[4];

^[2]; Jalan, Bharat ^[1]

Univ. of Minnesota, Minneapolis, MN (United States). Chemical Engineering and Materials Science
Washington Univ., St. Louis, MO (United States). Dept. of Energy, Environmental, and Chemical Engineering
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Nanyang Technological Univ. (Singapore). Energy Research Inst.
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States). Materials Sciences Division; Univ. of California, Berkeley, CA (United States). Materials Science and Engineering

Wide bandgap perovskite oxides with high room temperature conductivities and structural compatibility with a diverse family of organic/inorganic perovskite materials are of sign ificant interest as transparent conductors and as active components in power electronics. Such materials must also possess high room temperature mobility to minimize power consumption and to enable high-frequency applications. Here, we report n-type BaSnO ₃ films grown using hybrid molecular beam epitaxy with room temperature conductivity exceeding 10 ⁴ S cm ^-1 . Significantly, these films show room temperature mobilities up to 120 cm² V^-1 s ^-1 even at carrier concentrations above 3 × 10 ²⁰ cm ^-3 together with a wide bandgap (3 eV). We examine the mobility-limiting scattering mechanisms by calculating temperature-dependent mobility, and Seebeck coefficient using the Boltzmann transport framework and ab-initio calculations. These results place perovskite oxide semiconductors for the first time on par with the highly successful III-N system, thereby bringing all-transparent, high-power oxide electronics operating at room temperature a step closer to reality.

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Research Organization:: Lawrence Berkeley National Laboratory (LBNL), Berkeley, CA (United States)

Sponsoring Organization:: USDOE Office of Science (SC), Basic Energy Sciences (BES); USDOE Office of Energy Efficiency and Renewable Energy (EERE), Renewable Power Office. Solar Energy Technologies Office

Grant/Contract Number:: AC02-05CH11231; AC36-08GO28308

OSTI ID:: 1379840

Journal Information:: Nature Communications, Vol. 8; ISSN 2041-1723

Publisher:: Nature Publishing GroupCopyright Statement

Country of Publication:: United States

Language:: English

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Cited by: 163 works

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Title: Wide bandgap BaSnO3 films with room temperature conductivity exceeding 104 S cm-1

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Title: Wide bandgap BaSnO₃ films with room temperature conductivity exceeding 10⁴ S cm^-1