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Title: Optoelectronic properties and interband transition of La-doped BaSnO{sub 3} transparent conducting films determined by variable temperature spectral transmittance

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/1.4914482· OSTI ID:22399244
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  1. Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241 (China)

Perovskite-structured Ba{sub 1−x}La{sub x}SnO{sub 3} (x = 0–0.10) films have been directly grown on (0001) sapphire substrates by a sol-gel method. Optical properties and bandgap energy of the films have been investigated by transmittance spectra from 10 K to 450 K. It indicates that these films exhibit a high transmission of more than 80% in the visible region. With increasing temperature, there is a significant bandgap shrinkage of about 0.5 eV for lightly La doping (x ≤ 0.04) films. For heavily La doping concentration (x ≥ 0.06), the bandgap remains nearly stable with the temperature and La composition. This is due to the fact that the lattice expansion caused by La doping is close to the saturation for the film doped with x = 0.06. Moreover, temperature dependent conductivity behavior shows a similar pattern, which suggests that the doping concentration of La-doped BaSnO{sub 3} (BLSO) films has a saturated state. The La introduction can modify the Sn 5s-O 2p antibonding state and the nonbonding O 2p orbital, which remarkably affect the electronic bandgap of the BLSO films.

OSTI ID:
22399244
Journal Information:
Journal of Applied Physics, Vol. 117, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
Country of Publication:
United States
Language:
English