Metallic line defect in wide-bandgap transparent perovskite BaSnO3
- Univ. of Minnesota, Minneapolis, MN (United States); OSTI
- Brookhaven National Lab. (BNL), Upton, NY (United States). Center for Functional Nanomaterials (CFN)
- Univ. of Minnesota, Minneapolis, MN (United States); Univ. of Chicago, IL (United States); Argonne National Lab. (ANL), Argonne, IL (United States). Center for Nanoscale Materials
- Univ. of Minnesota, Minneapolis, MN (United States)
- Univ. of Minnesota, Minneapolis, MN (United States); LG Chem Ltd., Daejeon (Korea)
A line defect with metallic characteristics has been found in optically transparent BaSnO3 perovskite thin films. The distinct atomic structure of the defect core, composed of Sn and O atoms, was visualized by atomic-resolution scanning transmission electron microscopy (STEM). When doped with La, dopants that replace Ba atoms preferentially segregate to specific crystallographic sites adjacent to the line defect. The electronic structure of the line defect probed in STEM with electron energy-loss spectroscopy was supported by ab initio theory, which indicates the presence of Fermi level–crossing electronic bands that originate from defect core atoms. These metallic line defects also act as electron sinks attracting additional negative charges in these wide-bandgap BaSnO3 films.
- Research Organization:
- Argonne National Laboratory (ANL), Argonne, IL (United States)
- Sponsoring Organization:
- National Institute of Standards and Technology (NIST); National Science Foundation (NSF); US Air Force Office of Scientific Research (AFOSR); USDOE Office of Science (SC)
- Grant/Contract Number:
- AC02-06CH11357
- OSTI ID:
- 1815429
- Journal Information:
- Science Advances, Journal Name: Science Advances Journal Issue: 3 Vol. 7; ISSN 2375-2548
- Publisher:
- AAASCopyright Statement
- Country of Publication:
- United States
- Language:
- English
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