Observation of low voltage driven green emission from erbium doped Ga{sub 2}O{sub 3} light-emitting devices
- Department of Electrical and Electronic Engineering, Synchrotron Light Application Center, Saga University, Saga 840-8502 (Japan)
- Department of Materials Science and Engineering, Faculty of Engineering, Kyushu University, 744 Motooka, Fukuoka 819-0395 (Japan)
Erbium doped Ga{sub 2}O{sub 3} thin films were deposited on Si substrate by pulsed laser deposition method. Bright green emission (∼548 nm) can be observed by naked eye from Ga{sub 2}O{sub 3}:Er/Si light-emitting devices (LEDs). The driven voltage of this LEDs is 6.2 V which is lower than that of ZnO:Er/Si or GaN:Er/Si devices. Since the wide bandgap of Ga{sub 2}O{sub 3} contain more defect-related level which will enhance the effects of recombination between electrons in the defect-related level and the holes in the valence band, resulting in the improvement of the energy transfer to Er ions. We believe that this work paves the way for the development of Si-based green LEDs by using wide bandgap Ga{sub 2}O{sub 3} as the host materials for Er{sup 3+} ions.
- OSTI ID:
- 22590565
- Journal Information:
- Applied Physics Letters, Vol. 109, Issue 2; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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