Detailed investigation of defect states in Erbium doped In2O3 thin films
- Department of Physics, National Institute of Technology Durgapur, Durgapur - 713209 (India)
- School of Physics and Astronomy, Nottingham Nanotechnology and Nanoscience Center, University of Nottingham, Nottingham NG7 2RD (United Kingdom)
Highlights: • SIMS analysis confirmed the doping of Er into the In{sub 2}O{sub 3} TF. • I–V loop analysis gives reduced current memory window for In{sub 2}O{sub 3}:Er TF based device. • High ideality factor was determined at low temperature and explained. • Defect related photoconductivity was confirmed from low temperature measurement. • 10 K temporal response of the Au/In{sub 2}O{sub 3}:Er/Si confirmed removal of oxygen defects. - Abstract: Erbium doped Indium Oxide (In{sub 2}O{sub 3}:Er) thin films (TFs) were synthesised by spin-on technique. Secondary Ion Mass Spectrometry confirmed that Er is incorporated into the In{sub 2}O{sub 3} lattice and formed an In-O-Er layer. The current–voltage loop produced a lower loop current window of ∼3.6 × 10{sup −4} A for In{sub 2}O{sub 3}:Er TF based devices. The Au/In{sub 2}O{sub 3}:Er/Si Schottky devices have lower ideality factor (∼6) and higher barrier height (∼0.63 eV) at 300 K than Au/In{sub 2}O{sub 3}/Si control samples. A blue shift in the main band-gap (∼50 nm) was calculated for In{sub 2}O{sub 3}:Er TFs from 10 K photoresponse. The Au/In{sub 2}O{sub 3}:Er/Si samples show higher photosensitivity in the temperature range 10 K–300 K and maximum (∼15 times) in the UV region at 10 K as compared to the Au/In{sub 2}O{sub 3}/Si devices. In addition, the Au/In{sub 2}O{sub 3}:Er/Si devices have better UV to visible cut-off ratio (∼3 times). Excellent temporal responses were recorded for Au/In{sub 2}O{sub 3}:Er/Si in the UV region as compared to Au/In{sub 2}O{sub 3}/Si.
- OSTI ID:
- 22805451
- Journal Information:
- Materials Research Bulletin, Vol. 99; Other Information: Copyright (c) 2017 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.; Country of input: International Atomic Energy Agency (IAEA); ISSN 0025-5408
- Country of Publication:
- United States
- Language:
- English
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