The Effect of Erbium and Oxygen on the Photoluminescence Intensity of Erbium and the Composition of a-SiO{sub x}:(H, Er, O) Films Deposited by DC Magnetron Sputtering
- Ioffe Physicotechnical Institute, Russian Academy of Sciences, Politekhnicheskaya ul. 26, St. Petersburg, 194021 (Russian Federation)
The effect of the oxygen content (C{sub O{sub 2}}) in the gas mixture (20% of SiH{sub 4} + 80% of Ar) + O{sub 2} and the surface area of an erbium target (S{sub Er}) on the composition and Er{sup 3+} photoluminescence of amorphous a-SiO{sub x}:(H, Er, O) films prepared by dc magnetron sputtering has been investigated. Analysis of the experimental data shows that [Er-O] and [Er-O-Si-O] clusters are formed in the gas plasma due to the competing processes of oxidation and sputtering of Si and Er targets and to the interaction of [Si-O] and [Er-O] clusters with each other and with the oxygen in the gas phase. The discontinuities in the dependences of the contents of erbium-bound oxygen and erbium in a film, N{sub O}{sup Er-O} and N{sub Er} = f(C{sub O{sub 2}}, S{sub Er}), at C{sub O{sub 2}} {approx_equal} (5-6.5) mol % supports the hypothesis on the existence of different erbium clusters. The necessary conditions for preparing a-SiO{sub x}:(H, Er, O) films with the highest photoluminescence intensity of erbium ions at a wavelength of 1.54 {mu}m are determined.
- OSTI ID:
- 20719212
- Journal Information:
- Semiconductors, Vol. 39, Issue 8; Other Information: Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 39, 979-985 (No. 8, 2005); DOI: 10.1134/1.2010690; (c) 2005 Pleiades Publishing, Inc; Country of input: International Atomic Energy Agency (IAEA); TN:; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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