Light emission from silicon with tin-containing nanocrystals
- Interdisciplinary Nanoscience Center (iNANO), Aarhus University, Gustav Wieds Vej 14, DK-8000 Aarhus C (Denmark)
- Belarussian State University, Praspyekt Nyezalyezhnastsi 4, 220030 Minsk (Belarus)
- Department of Physics and Astronomy, Aarhus University, Ny Munkegade 120, DK-8000 Aarhus C (Denmark)
Tin-containing nanocrystals, embedded in silicon, have been fabricated by growing an epitaxial layer of Si{sub 1−x−y}Sn{sub x}C{sub y}, where x = 1.6 % and y = 0.04 % on a silicon substrate, followed by annealing at various temperatures ranging from 650 {sup ∘}C to 900 {sup ∘}C. The nanocrystal density and average diameters are determined by scanning transmission-electron microscopy to ≈10{sup 17} cm{sup −3} and ≈5 nm, respectively. Photoluminescence spectroscopy demonstrates that the light emission is very pronounced for samples annealed at 725 {sup ∘}C, and Rutherford back-scattering spectrometry shows that the nanocrystals are predominantly in the diamond-structured phase at this particular annealing temperature. The origin of the light emission is discussed.
- OSTI ID:
- 22493937
- Journal Information:
- AIP Advances, Journal Name: AIP Advances Journal Issue: 7 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
- Country of Publication:
- United States
- Language:
- English
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