Effect of surface Si-Si dimers on photoluminescence of silicon nanocrystals in the silicon dioxide matrix
Journal Article
·
· Journal of Experimental and Theoretical Physics
- Lobachevsky State University of Nizhni Novgorod (Russian Federation)
- Russian Academy of Sciences, Institute for Physics of Microstructures (Russian Federation)
The effect of surface states of silicon nanocrystals embedded in silicon dioxide on the photoluminescent properties of the nanocrystals is reported. We have investigated the time-resolved and stationary photoluminescence of silicon nanocrystals in the matrix of silicon dioxide in the visible and infrared spectral ranges at 77 and 300 K. The structures containing silicon nanocrystals were prepared by the high-temperature annealing of multilayer SiO{sub x}/SiO{sub 2} films. The understanding of the experimental results on photoluminescence is underlain by a model of autolocalized states arising on surface Si-Si dimers. The emission of autocatalized excitons is found for the first time, and the energy level of the autolocalized states is determined. The effect of these states on the mechanism of the excitation and the photoluminescence properties of nanocrystals is discussed for a wide range of their dimensions. It is reliably shown that the cause of the known blue boundary of photoluminescence of silicon nanocrystals in the silicon dioxide matrix is the capture of free excitons on autolocalized surface states.
- OSTI ID:
- 22750078
- Journal Information:
- Journal of Experimental and Theoretical Physics, Journal Name: Journal of Experimental and Theoretical Physics Journal Issue: 5 Vol. 118; ISSN JTPHES; ISSN 1063-7761
- Country of Publication:
- United States
- Language:
- English
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