Growing LaAlO{sub 3}/SrTiO{sub 3} interfaces by sputter deposition

Journal Article · Mon Jun 15 04:00:00 EDT 2015 · AIP Advances

DOI:https://doi.org/10.1063/1.4923285· OSTI ID:22493916

Dildar, I. M. ^[1]; Neklyudova, M.; Xu, Q.; Zandbergen, H. W. ^[2]; Harkema, S. ^[3]; Boltje, D.

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1. Kamerlingh Onnes Laboratorium, Leiden University (Netherlands)
2. National Center for High Resolution Microscopy, Kavli Institute for Nanoscience, Delft Technical University, Lorentzweg 1, 2628 CJ Delft (Netherlands)
3. Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede (Netherlands)

Sputter deposition of oxide materials in a high-pressure oxygen atmosphere is a well-known technique to produce thin films of perovskite oxides in particular. Also interfaces can be fabricated, which we demonstrated recently by growing LaAlO{sub 3} on SrTiO{sub 3} substrates and showing that the interface showed the same high degree of epitaxy and atomic order as is made by pulsed laser deposition. However, the high pressure sputtering of oxides is not trivial and number of parameters are needed to be optimized for epitaxial growth. Here we elaborate on the earlier work to show that only a relatively small parameter window exists with respect to oxygen pressure, growth temperature, radiofrequency power supply and target to substrate distance. In particular the sensitivity to oxygen pressure makes it more difficult to vary the oxygen stoichiometry at the interface, yielding it insulating rather than conducting.

• OSTI ID: 22493916
• Journal Information: AIP Advances, Journal Name: AIP Advances Journal Issue: 6 Vol. 5; ISSN AAIDBI; ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINATES
CRYSTAL GROWTH
ENERGY BEAM DEPOSITION
EPITAXY
INTERFACES
LANTHANUM COMPOUNDS
LASER RADIATION
OXYGEN
PEROVSKITE
PULSED IRRADIATION
RADIOWAVE RADIATION
SPUTTERING
STOICHIOMETRY
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS