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Epitaxially grown sputtered LaAlO sub 3 films

Journal Article · · Applied Physics Letters; (USA)
DOI:https://doi.org/10.1063/1.104153· OSTI ID:6260220
; ; ;  [1]; ;  [2]
  1. TRW Space Technology Group, Redondo Beach, CA (USA)
  2. Solar Energy Research Institute, Golden, CO (USA)
We have grown crystalline thin films of LaAlO{sub 3} using off-axis rf sputtering from a single stoichiometric target. The films grow epitaxially on SrTiO{sub 3} and LaAlO{sub 3} (100) substrates as well as on YBa{sub 2}Cu{sub 3}O{sub 7} thin films. We report on the growth conditions used to make these films, the properties of the films, and the properties of bilayer and trilayer structures containing both LaAlO{sub 3} and YBa{sub 2}Cu{sub 3}O{sub 7} films. Transmission electron microscopy cross-sectional and x-ray diffraction analyses indicate that all the constituent films in the multilayers grow epitaxially and that the interfaces between the films are sharply defined. Preliminary transport measurements on these multilayers show that LaAlO{sub 3} can be used for dielectric layers in a variety of high-temperature superconductor electronic circuits.
OSTI ID:
6260220
Journal Information:
Applied Physics Letters; (USA), Journal Name: Applied Physics Letters; (USA) Vol. 57:19; ISSN APPLA; ISSN 0003-6951
Country of Publication:
United States
Language:
English

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