Excitons in coupled type-II double quantum wells under electric and magnetic fields: InAs/AlSb/GaSb

Journal Article · Sat Nov 21 04:00:00 EST 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4935546· OSTI ID:22492955

Pan, W. ^[1]

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1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)

We calculate the wave functions and the energy levels of an exciton in double quantum wells under electric (F) and magnetic (B) fields along the growth axis. The result is employed to study the energy levels, the binding energy, and the boundary on the F–B plane of the phase between the indirect exciton ground state and the semiconductor ground state for several typical structures of the type-II quasi-two-dimensional quantum wells such as InAs/AlSb/GaSb. The inter-well inter-band radiative transition rates are calculated for exciton creation and recombination. We find that the rates are modulated over several orders of magnitude by the electric and magnetic fields.

• OSTI ID: 22492955
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 19 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BINDING ENERGY
EXCITONS
GALLIUM ANTIMONIDES
GROUND STATES
INDIUM ARSENIDES
MAGNETIC FIELDS
QUANTUM WELLS
RECOMBINATION
SEMICONDUCTOR MATERIALS
TWO-DIMENSIONAL SYSTEMS
WAVE FUNCTIONS