Intersubband energies in strain-compensated InGaN/AlInN quantum well structures

Journal Article · Fri Jan 15 00:00:00 EST 2016 · AIP Advances

DOI:https://doi.org/10.1063/1.4940899· OSTI ID:22492390

Park, Seoung-Hwan ^[1]; Ahn, Doyeol ^[2]

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1. Department of Electronics Engineering, Catholic University of Daegu, Hayang, Kyeongsan, Kyeongbuk, 712-702 (Korea, Republic of)
2. Institute of Quantum Information Processing and Systems, University of Seoul, 90 Jeonnong, Tongdaimoon-Gu, Seoul, Korea 130-743 (Korea, Republic of)

Intersubband transition energies in the conduction band for strain-compensated InGaN/AlInN quantum well (QW) structures were investigated as a function of strain based on an effective mass theory with the nonparabolicity taken into account. In the case of an InGaN/AlInN QW structure lattice-matched to GaN, the wavelength is shown to be longer than 1.55 μm. On the other hand, strain-compensated QW structures show that the wavelength of 1.55 μm can be reached even for the QW structure with a relatively small strain of 0.3 %. Hence, the strain-compensated QW structures can be used for telecommunication applications at 1.55 μm with a small strain, compared to conventional GaN/AlN QW structure.

• OSTI ID: 22492390
• Journal Information: AIP Advances, Vol. 6, Issue 1; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 2158-3226
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
COMPARATIVE EVALUATIONS
CRYSTAL LATTICES
EFFECTIVE MASS
ELECTRONIC STRUCTURE
GALLIUM NITRIDES
INDIUM COMPOUNDS
QUANTUM WELLS
STRAINS
WAVELENGTHS