Fabrication and characterization of GaN nanowire doubly clamped resonators

Journal Article · Mon Sep 21 04:00:00 EDT 2015 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4930088· OSTI ID:22489495

Mathew, John P.; Hatui, Nirupam; Rahman, A. Azizur; Deshmukh, Mandar M.; Bhattacharya, Arnab ^[1]

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1. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)

Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

• OSTI ID: 22489495
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 11 Vol. 118; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
ELECTRON BEAMS
FABRICATION
FREQUENCY MEASUREMENT
GALLIUM NITRIDES
MECHANICAL PROPERTIES
NANOWIRES
PIEZOELECTRICITY
PRESSURE RANGE GIGA PA
RESONATORS
SAPPHIRE