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Title: Fabrication and characterization of GaN nanowire doubly clamped resonators

Abstract

Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.

Authors:
; ; ; ; ;  [1]
  1. Department of Condensed Matter Physics and Materials Science, Tata Institute of Fundamental Research, Homi Bhabha Road, Mumbai 400005 (India)
Publication Date:
OSTI Identifier:
22489495
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 118; Journal Issue: 11; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ELECTRON BEAMS; FABRICATION; FREQUENCY MEASUREMENT; GALLIUM NITRIDES; MECHANICAL PROPERTIES; NANOWIRES; PIEZOELECTRICITY; PRESSURE RANGE GIGA PA; RESONATORS; SAPPHIRE

Citation Formats

Maliakkal, Carina B., E-mail: carina@tifr.res.in, Mathew, John P., Hatui, Nirupam, Rahman, A. Azizur, Deshmukh, Mandar M., and Bhattacharya, Arnab. Fabrication and characterization of GaN nanowire doubly clamped resonators. United States: N. p., 2015. Web. doi:10.1063/1.4930088.
Maliakkal, Carina B., E-mail: carina@tifr.res.in, Mathew, John P., Hatui, Nirupam, Rahman, A. Azizur, Deshmukh, Mandar M., & Bhattacharya, Arnab. Fabrication and characterization of GaN nanowire doubly clamped resonators. United States. doi:10.1063/1.4930088.
Maliakkal, Carina B., E-mail: carina@tifr.res.in, Mathew, John P., Hatui, Nirupam, Rahman, A. Azizur, Deshmukh, Mandar M., and Bhattacharya, Arnab. 2015. "Fabrication and characterization of GaN nanowire doubly clamped resonators". United States. doi:10.1063/1.4930088.
@article{osti_22489495,
title = {Fabrication and characterization of GaN nanowire doubly clamped resonators},
author = {Maliakkal, Carina B., E-mail: carina@tifr.res.in and Mathew, John P. and Hatui, Nirupam and Rahman, A. Azizur and Deshmukh, Mandar M. and Bhattacharya, Arnab},
abstractNote = {Gallium nitride (GaN) nanowires (NWs) have been intensely researched as building blocks for nanoscale electronic and photonic device applications; however, the mechanical properties of GaN nanostructures have not been explored in detail. The rigidity, thermal stability, and piezoelectric properties of GaN make it an interesting candidate for nano-electromechanical systems. We have fabricated doubly clamped GaN NW electromechanical resonators on sapphire using electron beam lithography and estimated the Young's modulus of GaN from resonance frequency measurements. For wires of triangular cross section with side ∼90 nm, we obtained values for the Young's modulus to be about 218 and 691 GPa, which are of the same order of magnitude as the values reported for bulk GaN. We also discuss the role of residual strain in the nanowire on the resonant frequency and the orientation dependence of the Young's modulus in wurtzite crystals.},
doi = {10.1063/1.4930088},
journal = {Journal of Applied Physics},
number = 11,
volume = 118,
place = {United States},
year = 2015,
month = 9
}
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