Measurement of the electrostatic edge effect in wurtzite GaN nanowires
- Department of Physical Electronics, School of Electrical Engineering, Tel-Aviv University, Ramat-Aviv 69978 (Israel)
- School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, Georgia 30332 (United States)
- NIST, Physical Measurement Laboratory, Division 686, 325 Broadway, Boulder, Colorado 80305 (United States)
The electrostatic effect of the hexagonal corner on the electronic structure in wurtzite GaN nanowires (NWs) was directly measured using Kelvin probe force microscopy (KPFM). By correlating electrostatic simulations with the measured potential difference between the nanowire face and the hexagonal vertices, the surface state concentration and band bending of GaN NWs were estimated. The surface band bending is important for an efficient design of high electron mobility transistors and for opto-electronic devices based on GaN NWs. This methodology provides a way to extract NW parameters without making assumptions concerning the electron affinity. We are taking advantage of electrostatic modeling and the high precision that KPFM offers to circumvent a major source of uncertainty in determining the surface band bending.
- OSTI ID:
- 22392071
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 105; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Nanoscale size dependence parameters on lattice thermal conductivity of Wurtzite GaN nanowires
Electronic and structural characteristics of zinc-blende wurtzite biphasic homostructure GaN nanowires