Impact of the GaN nanowire polarity on energy harvesting
- Laboratoire de Photonique et de Nanostructures, CNRS-LPN-UPR20, Route de Nozay, 91460 Marcoussis (France)
- Laboratoire de Génie Electrique de Paris, UMR CNRS-Supélec 8507, Universités Pierre et Marie Curie et Paris-Sud, 11 rue Joliot-Curie, 91192 Gif sur Yvette (France)
We investigate the piezoelectric generation properties of GaN nanowires (NWs) by atomic force microscopy equipped with a Resiscope module for electrical measurements. By correlating the topography profile of the NWs with the recorded voltage peaks generated by these nanostructures in response to their deformation, we demonstrate the influence of their polarity on the rectifying behavior of the Schottky diode formed between the NWs and the electrode of measurement. These results establish that the piezo-generation mechanism crucially depends on the structural characteristics of the NWs.
- OSTI ID:
- 22300282
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 21 Vol. 104; ISSN APPLAB; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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