Type I band alignment in GaAs{sub 81}Sb{sub 19}/GaAs core-shell nanowires

Journal Article · Mon Sep 14 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930991· OSTI ID:22482079

Xu, T. ^[1]; Wei, M. J. ^[2]; Capiod, P.; Díaz Álvarez, A.; Han, X. L.; Troadec, D.; Nys, J. P.; Berthe, M.; Lefebvre, I.; Patriarche, G. ^[3]; Plissard, S. R. ^[1]; Caroff, P. ^[1]; others, and

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1. Institut d'Electronique, de Microélectronique et de Nanotechnologies (IEMN), CNRS, UMR 8520, Département ISEN, 41 bd Vauban, 59046 Lille Cedex (France)
2. Key Laboratory of Advanced Display and System Application, Shanghai University, 149 Yanchang Road, Shanghai 200072 (China)
3. CNRS-Laboratoire de Photonique et de Nanostructures (LPN), Route de Nozay, 91460 Marcoussis (France)

The composition and band gap of the shell that formed during the growth of axial GaAs/GaAs{sub 81}Sb{sub 19}/ GaAs heterostructure nanowires have been investigated by transmission electron microscopy combined with energy dispersion spectroscopy, scanning tunneling spectroscopy, and density functional theory calculations. On the GaAs{sub 81}Sb{sub 19} intermediate segment, the shell is found to be free of Sb (pure GaAs shell) and transparent to the tunneling electrons, despite the (110) biaxial strain that affects its band gap. As a result, a direct measurement of the core band gap allows the quantitative determination of the band offset between the GaAs{sub 81}Sb{sub 19} core and the GaAs shell and identifies it as a type I band alignment.

• OSTI ID: 22482079
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 11 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DENSITY FUNCTIONAL METHOD
GALLIUM ARSENIDES
NANOWIRES
SPECTROSCOPY
STRAINS
TRANSMISSION ELECTRON MICROSCOPY
TUNNEL EFFECT