Enhanced efficiency of p-type doping by band-offset effect in wurtzite and zinc-blende GaAs/InAs-core-shell nanowires

Journal Article · Sun Sep 07 04:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4894442· OSTI ID:22314388

Song, Changsheng; Wang, Jiqing; Lin, Weixian; Mao, Huibing; Zhao, Qiang; Yang, Pingxiong ^[1]; Xing, Huaizhong ^[2]

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1. Key Laboratory of Polarized Materials and Devices, East china Normal University, shanghai 200241 (China)
2. Department of Applied Physics, Donghua University, Shanghai 201620 (China)

Using first principles calculation based on density-functional theory, we investigated p-type electronic structures and the doping mechanism in wurtzite (WZ) and zinc-blende (ZB) GaAs/InAs-core-shell nanowires (NWs) along the [0001] and [111] directions, respectively. Comparing the doping in WZ and ZB core-shell NWs, we found it is easier and more stable to realize dopant in WZ NWs. Due to the type I band-offset, p-type doping in the GaAs-core of GaAs{sub core}/InAs{sub shell} for both WZ and ZB NWs makes that the valence band-edge electrons in the InAs-shell can spontaneously transfer to the impurity states, forming one-dimensional hole gas. In particular, this process accompanies with a reverse transition in WZ core-shell nanowire due to the existence of antibonding and bonding states.

• OSTI ID: 22314388
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 9 Vol. 116; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
BOUND STATE
COMPARATIVE EVALUATIONS
DENSITY FUNCTIONAL METHOD
ELECTRONIC STRUCTURE
GALLIUM ARSENIDES
INDIUM ARSENIDES
QUANTUM WIRES
ZINC SULFIDES