Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Journal Article · Mon Sep 07 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4930311· OSTI ID:22482050

Arai, Miho; Moriya, Rai; Yabuki, Naoto; Masubuchi, Satoru ^[1]; Ueno, Keiji ^[2]; Machida, Tomoki ^[1]

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1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
2. Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan)

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe{sub 0.25}TaS{sub 2}. The vdW interlayer coupling at the Fe-intercalated plane of Fe{sub 0.25}TaS{sub 2} allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.

• OSTI ID: 22482050
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CLATHRATES
CRYSTALS
MAGNETIC FIELDS
MAGNETORESISTANCE
SPIN ORIENTATION
SURFACES
TUNNEL EFFECT
VAN DER WAALS FORCES