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Title: Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide

Abstract

We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe{sub 0.25}TaS{sub 2}. The vdW interlayer coupling at the Fe-intercalated plane of Fe{sub 0.25}TaS{sub 2} allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.

Authors:
; ; ;  [1];  [2];  [1];  [3]
  1. Institute of Industrial Science, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505 (Japan)
  2. Department of Chemistry, Graduate School of Science and Engineering, Saitama University, Saitama 338-8570 (Japan)
  3. (Japan)
Publication Date:
OSTI Identifier:
22482050
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 107; Journal Issue: 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; CLATHRATES; CRYSTALS; MAGNETIC FIELDS; MAGNETORESISTANCE; SPIN ORIENTATION; SURFACES; TUNNEL EFFECT; VAN DER WAALS FORCES

Citation Formats

Arai, Miho, Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp, Yabuki, Naoto, Masubuchi, Satoru, Ueno, Keiji, Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp, and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505. Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide. United States: N. p., 2015. Web. doi:10.1063/1.4930311.
Arai, Miho, Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp, Yabuki, Naoto, Masubuchi, Satoru, Ueno, Keiji, Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp, & Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505. Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide. United States. doi:10.1063/1.4930311.
Arai, Miho, Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp, Yabuki, Naoto, Masubuchi, Satoru, Ueno, Keiji, Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp, and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505. Mon . "Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide". United States. doi:10.1063/1.4930311.
@article{osti_22482050,
title = {Construction of van der Waals magnetic tunnel junction using ferromagnetic layered dichalcogenide},
author = {Arai, Miho and Moriya, Rai, E-mail: moriyar@iis.u-tokyo.ac.jp and Yabuki, Naoto and Masubuchi, Satoru and Ueno, Keiji and Machida, Tomoki, E-mail: tmachida@iis.u-tokyo.ac.jp and Institute for Nano Quantum Information Electronics, University of Tokyo, 4-6-1 Komaba, Meguro, Tokyo 153-8505},
abstractNote = {We investigate the micromechanical exfoliation and van der Waals (vdW) assembly of ferromagnetic layered dichalcogenide Fe{sub 0.25}TaS{sub 2}. The vdW interlayer coupling at the Fe-intercalated plane of Fe{sub 0.25}TaS{sub 2} allows exfoliation of flakes. A vdW junction between the cleaved crystal surfaces is constructed by dry transfer method. We observe tunnel magnetoresistance in the resulting junction under an external magnetic field applied perpendicular to the plane, demonstrating spin-polarized tunneling between the ferromagnetic layered material and the vdW junction.},
doi = {10.1063/1.4930311},
journal = {Applied Physics Letters},
number = 10,
volume = 107,
place = {United States},
year = {Mon Sep 07 00:00:00 EDT 2015},
month = {Mon Sep 07 00:00:00 EDT 2015}
}
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