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Planar tunneling spectroscopy on van der Waals superconductors with AlOx junction grown by atomic layer deposition

Journal Article · · Journal of Applied Physics
DOI:https://doi.org/10.1063/5.0124947· OSTI ID:1924193
Here, we demonstrate a method for fabricating a high-quality AlOx-based planar tunnel junction using atomic layer deposition, integrated with the exfoliation and transfer techniques for van der Waals (vdW) materials. The tunneling spectroscopy results on exfoliated Bi2Sr2CaCu2O8+δ and 2H-NbSe2 vdW superconductors are highly consistent with that obtained by ultrahigh vacuum scanning tunneling spectroscopy on atomically clean surfaces. The planar tunneling devices enable high-precision spectroscopy over a wide range of temperatures and magnetic fields and reveal novel features and stark contrast between high-TC cuprates and conventional superconductors. This method represents a universally applicable technique for probing the electronic structure of various two-dimensional vdW materials.
Research Organization:
Brookhaven National Laboratory (BNL), Upton, NY (United States)
Sponsoring Organization:
Quantum Science and Technology; USDOE; USDOE Office of Science (SC), Basic Energy Sciences (BES)
Grant/Contract Number:
SC0012704
OSTI ID:
1924193
Alternate ID(s):
OSTI ID: 1908030
Report Number(s):
BNL-223997-2023-JAAM
Journal Information:
Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 133; ISSN 0021-8979
Publisher:
American Institute of Physics (AIP)Copyright Statement
Country of Publication:
United States
Language:
English

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Figures / Tables (4)


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