Strain mapping in an InGaN/GaN nanowire using a nano-focused x-ray beam
- Niels Bohr Institute, University of Copenhagen, Universitetsparken 5, 2100 Copenhagen (Denmark)
- Deutsches Elektronen-Synchrotron DESY, Notkestrasse 85, D-22607 Hamburg (Germany)
- NanoLund, Department of Physics, Lund University, P.O. Box 118, 22 100 Lund (Sweden)
Strained InGaN/GaN core-shell nanowires (NWs) are promising candidates for solid state lighting applications due to their superior properties compared to planar films. NW based devices consist of multiple functional layers, which sum up to many hundred nanometers in thickness, that can uniquely be accessed in a non-destructive fashion by hard X-rays. Here, we present a detailed nanoscale strain mapping performed on a single, 400 nm thick and 2 μm long core-shell InGaN/GaN nanowire with an x-ray beam focused down to 100 nm. We observe an inhomogeneous strain distribution caused by the asymmetric strain relaxation in the shell. One side of the InGaN shell was fully strained, whereas the other side and the top part were relaxed. Additionally, tilt and strain gradients were determined at the interface with the substrate.
- OSTI ID:
- 22482045
- Journal Information:
- Applied Physics Letters, Vol. 107, Issue 10; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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