Acceptor states in heteroepitaxial CdHgTe films grown by molecular-beam epitaxy
- Russian Academy of Sciences, Ioffe Physical-Technical Institute (Russian Federation)
- R&D Institute for Materials SRC Carat (Ukraine)
- Russian Academy of Sciences, Rzhanov Institute of Semiconductor Physics, Siberian Branch (Russian Federation)
The photoluminescence method is used to study acceptor states in CdHgTe heteroepitaxial films (HEFs) grown by molecular-beam epitaxy. A comparison of the photoluminescence spectra of HEFs grown on GaAs substrates (CdHgTe/GaAs) with the spectra of CdHgTe/Si HEFs demonstrates that acceptor states with energy depths of about 18 and 27 meV are specific to CdHgTe/GaAs HEFs. The possible nature of these states and its relation to the HEF synthesis conditions and, in particular, to the vacancy doping occurring under conditions of a mercury deficiency during the course of epitaxy and postgrowth processing are discussed.
- OSTI ID:
- 22470045
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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