Formation of Si nanocrystals in multilayered nanoperiodic Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/.../Si(100) structures: Synchrotron and photoluminescence data
- Voronezh State University (Russian Federation)
- Lobachevsky State University of Nizhni Novgorod (Russian Federation)
The results of X-ray absorption near-edge structure spectroscopy data obtained with synchrotron radiation for multilayered nanoperiodic Al{sub 2}O{sub 3}/SiO{sub x}/Al{sub 2}O{sub 3}/SiO{sub x}/.../Si(100) structures annealed at temperatures of 500–1100°C are reported. The data show that, upon high-temperature annealing (∼1100°C), the structures are modified. The modification is attributed to the formation of Si nanocrystals in deep layers of the structures. At the same time, the structures exhibit size-dependent high-intensity photoluminescence in the photon-energy range 1.4–1.52 eV.
- OSTI ID:
- 22470039
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 3 Vol. 49; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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