Thermal evolution of the morphology, structure, and optical properties of multilayer nanoperiodic systems produced by the vacuum evaporation of SiO and SiO{sub 2}
- Lobachevsky State University of Nizhni Novgorod (Russian Federation)
The alternate vacuum evaporation of SiO and SiO{sub 2} from separate sources is used to produce amorphous a-SiO{sub x}/SiO{sub 2} multilayer nanoperiodic structures with periods of 5-10 nm and a number of layers of up to 64. The effect of annealing at temperatures T{sub a} = 500-1100 Degree-Sign C on the structural and optical properties of the nanostructures is studied. The results of transmission electron microscopy of the samples annealed at 1100 Degree-Sign C indicate the annealing-induced formation of vertically ordered quasiperiodic arrays of Si nanocrystals, whose dimensions are comparable to the a-SiO{sub x}-layer thickness in the initial nanostructures. The nanostructures annealed at 1100 Degree-Sign C exhibit size-dependent photoluminescence in the wavelength range 750-830 nm corresponding to Si nanocrystals. The data on infrared absorption and Raman scattering show that the thermal evolution of structural and phase state of the SiO{sub x} layers with increasing annealing temperature proceeds through the formation of amorphous Si nanoinclusions with the subsequent formation and growth of Si nanocrystals.
- OSTI ID:
- 22105530
- Journal Information:
- Semiconductors, Journal Name: Semiconductors Journal Issue: 4 Vol. 47; ISSN SMICES; ISSN 1063-7826
- Country of Publication:
- United States
- Language:
- English
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