Carriers confinement study of GaNAsBi/GaAs QWs emitting at 1.3 and 1.55 μm

Journal Article · Fri May 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615050048· OSTI ID:22469966

Ben Nasr, A.; Habchi, M. M.; Bilel, C.; El Jani, B. ^[1]

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1. University of Monastir, Faculty of Sciences, Unité de Recherche sur les Hetero-Epitaxies et Applications (Tunisia)

Band structures of GaN{sub 0.58y}As{sub 1–1.58y}Bi{sub y}/GaAs quantum wells (QWs) were studied using the band anticrossing model and the envelope function approximation. The confined states energies and the oscillator strengths of interband transitions were determined for well widths L{sub W} and Bi composition y varying in the range of 4–10 nm and 0–0.07 respectively. The emissions 1.3 and 1.55 μm were reached for specific couples (L{sub W}, y). The band anticrossing effect on the in-plane carriers effective mass has been investigated at k = 0. The absorbance spectra were calculated for QWs operating at 1.3 and 1.55 μm.

• OSTI ID: 22469966
• Journal Information: Semiconductors, Vol. 49, Issue 5; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

77 NANOSCIENCE AND NANOTECHNOLOGY
36 MATERIALS SCIENCE
APPROXIMATIONS
BISMUTH COMPOUNDS
CHARGE CARRIERS
CONFINEMENT
EFFECTIVE MASS
ELECTRONIC STRUCTURE
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
OSCILLATOR STRENGTHS
QUANTUM WELLS