Properties of AlN films deposited by reactive ion-plasma sputtering

Journal Article · Thu Oct 15 00:00:00 EDT 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615100036· OSTI ID:22469713

Bert, N. A.; Bondarev, A. D.; Zolotarev, V. V.; Kirilenko, D. A.; Lubyanskiy, Ya. V.; Lyutetskiy, A. V.; Slipchenko, S. O.; Petrunov, A. N.; Ayusheva, K. R.; Arsentyev, I. N.; Tarasov, I. S. ^[1]

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1. Russian Academy of Sciences, Ioffe Physical–Technical Institute (Russian Federation)

The properties of SiO{sub 2}, Al{sub 2}O{sub 3}, and AlN dielectric coatings deposited by reactive ion-plasma sputtering are studied. The refractive indices of the dielectric coatings are determined by optical ellipsometry. It is shown that aluminum nitride is the optimal material for achieving maximum illumination of the output mirror of a semiconductor laser. A crystalline phase with a hexagonal atomic lattice and oxygen content of up to 10 at % is found by transmission electron microscopy in the aluminum-nitride films. It is found that a decrease in the concentration of residual oxygen in the chamber of the reactive ion-plasma sputtering installation makes it possible to eliminate the appearance of vertical pores in the bulk of the aluminum-nitride film.

• OSTI ID: 22469713
• Journal Information: Semiconductors, Vol. 49, Issue 10; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM
ALUMINIUM NITRIDES
ALUMINIUM OXIDES
COATINGS
CONCENTRATION RATIO
DIELECTRIC MATERIALS
ELLIPSOMETRY
FILMS
ILLUMINANCE
OXYGEN
PLASMA
REFRACTIVE INDEX
SEMICONDUCTOR LASERS
SILICA
SILICON OXIDES
SPUTTERING
TRANSMISSION ELECTRON MICROSCOPY