Effects of deposition parameters on the structure of AlN coatings grown by reactive magnetron sputtering

Journal Article · Tue May 15 04:00:00 EDT 2007 · Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films

DOI:https://doi.org/10.1116/1.2730513· OSTI ID:20979372

Khanna, Atul; Bhat, Deepak G ^[1]

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1. Department of Mechanical Engineering, University of Arkansas, Fayetteville, Arkansas 72701 (United States)

AlN films were deposited on microscopy glass slide and silicon (111 orientation) substrates by reactive ac magnetron sputtering using two nitrogen concentrations and three discharge powers of 1.5, 2.5, and 5.0 kW. X-ray diffraction studies showed that films prepared on glass and Si substrates were of hexagonal wurtizite phase. Films on Si substrates also contained small amounts of the cubic phase of AlN besides the predominantly hexagonal wurtizite phase. AlN coatings on glass substrates were textured towards the (00{center_dot}2) plane; this preferred orientation of crystals was found to decrease with increase in sputtering power. Scanning electron microscopy studies showed that AlN films prepared at higher nitrogen concentration have a microstructure consisting of pebblelike crystals, some of which were hexagonal in shape. The crystal size in the coatings increased with sputtering power and was in the range of 70-230 nm.

• OSTI ID: 20979372
• Journal Information: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films, Journal Name: Journal of Vacuum Science and Technology. A, International Journal Devoted to Vacuum, Surfaces, and Films Journal Issue: 3 Vol. 25; ISSN 1553-1813
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
COATINGS
CRYSTAL STRUCTURE
CRYSTALS
DEPOSITION
GLASS
GRAIN ORIENTATION
NITROGEN
SCANNING ELECTRON MICROSCOPY
SEMICONDUCTOR MATERIALS
SILICON
SPUTTERING
SUBSTRATES
THIN FILMS
X-RAY DIFFRACTION