Design concepts of monolithic metamorphic vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range

Journal Article · Sun Nov 15 00:00:00 EST 2015 · Semiconductors

DOI:https://doi.org/10.1134/S1063782615110068· OSTI ID:22469686

Karachinsky, L. Ya.; Novikov, I. I.; Babichev, A. V.; Nevedomskiy, V. N. ^[1]; Bugrov, V. E. ^[2]

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1. Russian Academy of Sciences, Ioffe Institute (Russian Federation)
2. ITMO University (Russian Federation)

Possible design concepts for long-wavelength vertical-cavity surface-emitting lasers for the 1300–1550 nm spectral range on GaAs substrates are suggested. It is shown that a metamorphic GaAs–InGaAs heterostructure with a thin buffer layer providing rapid transition from the lattice constant of GaAs to that of In{sub x}Ga{sub 1–x}As with an indium fraction of x < 0.3 can be formed by molecular-beam epitaxy. Analysis by transmission electron microscopy demonstrated the effective localization of mismatch dislocations in the thin buffer layer and full suppression of their penetration into the overlying InGaAs metamorphic layer.

• OSTI ID: 22469686
• Journal Information: Semiconductors, Vol. 49, Issue 11; Other Information: Copyright (c) 2015 Pleiades Publishing, Ltd.; Country of input: International Atomic Energy Agency (IAEA); ISSN 1063-7826
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ABSORPTION SPECTROSCOPY
CONCENTRATION RATIO
DISLOCATIONS
GALLIUM ARSENIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
LATTICE PARAMETERS
LAYERS
MOLECULAR BEAM EPITAXY
SUBSTRATES
SURFACES
TRANSMISSION ELECTRON MICROSCOPY
X-RAY SPECTROSCOPY