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Title: Liquid-phase-deposited siloxane-based capping layers for silicon solar cells

Abstract

We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.

Authors:
 [1]; ; ; ; ; ; ;  [2];  [1];  [3]
  1. Institute for Solar Energy Research Hamelin (ISFH), Am Ohrberg 1, 31860 Emmerthal (Germany)
  2. Optitune International Pte. Ltd., 20 Maxwell Road, #05-08 Maxwell House, Singapore 069113 (Singapore)
  3. (Germany)
Publication Date:
OSTI Identifier:
22420251
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 106; Journal Issue: 5; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
71 CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; ALUMINIUM; ALUMINIUM OXIDES; CZOCHRALSKI METHOD; DEPOSITS; DIELECTRIC MATERIALS; DOPED MATERIALS; EFFICIENCY; FILMS; LAYERS; PASSIVATION; SCREEN PRINTING; SILICON; SILICON SOLAR CELLS; SILOXANES; SOLAR ENERGY CONVERSION; SURFACES

Citation Formats

Veith-Wolf, Boris, Wang, Jianhui, Hannu-Kuure, Milja, Chen, Ning, Hadzic, Admir, Williams, Paul, Leivo, Jarkko, Karkkainen, Ari, Schmidt, Jan, and Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells. United States: N. p., 2015. Web. doi:10.1063/1.4907533.
Veith-Wolf, Boris, Wang, Jianhui, Hannu-Kuure, Milja, Chen, Ning, Hadzic, Admir, Williams, Paul, Leivo, Jarkko, Karkkainen, Ari, Schmidt, Jan, & Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover. Liquid-phase-deposited siloxane-based capping layers for silicon solar cells. United States. doi:10.1063/1.4907533.
Veith-Wolf, Boris, Wang, Jianhui, Hannu-Kuure, Milja, Chen, Ning, Hadzic, Admir, Williams, Paul, Leivo, Jarkko, Karkkainen, Ari, Schmidt, Jan, and Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover. Mon . "Liquid-phase-deposited siloxane-based capping layers for silicon solar cells". United States. doi:10.1063/1.4907533.
@article{osti_22420251,
title = {Liquid-phase-deposited siloxane-based capping layers for silicon solar cells},
author = {Veith-Wolf, Boris and Wang, Jianhui and Hannu-Kuure, Milja and Chen, Ning and Hadzic, Admir and Williams, Paul and Leivo, Jarkko and Karkkainen, Ari and Schmidt, Jan and Department of Solar Energy, Institute of Solid-State Physics, Leibniz University Hanover, Appelstrasse 2, 30167 Hanover},
abstractNote = {We apply non-vacuum processing to deposit dielectric capping layers on top of ultrathin atomic-layer-deposited aluminum oxide (AlO{sub x}) films, used for the rear surface passivation of high-efficiency crystalline silicon solar cells. We examine various siloxane-based liquid-phase-deposited (LPD) materials. Our optimized AlO{sub x}/LPD stacks show an excellent thermal and chemical stability against aluminum metal paste, as demonstrated by measured surface recombination velocities below 10 cm/s on 1.3 Ωcm p-type silicon wafers after firing in a belt-line furnace with screen-printed aluminum paste on top. Implementation of the optimized LPD layers into an industrial-type screen-printing solar cell process results in energy conversion efficiencies of up to 19.8% on p-type Czochralski silicon.},
doi = {10.1063/1.4907533},
journal = {Applied Physics Letters},
number = 5,
volume = 106,
place = {United States},
year = {Mon Feb 02 00:00:00 EST 2015},
month = {Mon Feb 02 00:00:00 EST 2015}
}