Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

Tao, Yuguo; Upadhyaya, Vijaykumar; Chen, Chia-Wei; Payne, Adam; Chang, Elizabeth Lori; Upadhyaya, Ajay; Rohatgi, Ajeet

doi:10.1002/pip.2739

Large area tunnel oxide passivated rear contact n -type Si solar cells with 21.2% efficiency: Large area tunnel oxide passivated rear contact n -type Si solar cells

Journal Article · Wed Jan 20 23:00:00 EST 2016 · Progress in Photovoltaics

DOI:https://doi.org/10.1002/pip.2739· OSTI ID:1293939

Tao, Yuguo ^[1]; Upadhyaya, Vijaykumar ^[2]; Chen, Chia-Wei ^[2]; Payne, Adam ^[3]; Chang, Elizabeth Lori ^[2]; Upadhyaya, Ajay ^[2]; Rohatgi, Ajeet ^[4]

Georgia Inst. of Technology, Atlanta, GA (United States); Georgia Institute of Technology
Georgia Inst. of Technology, Atlanta, GA (United States)
Suniva Inc., Norcross GA (United States)
Georgia Inst. of Technology, Atlanta, GA (United States); Suniva Inc., Norcross GA (United States)

This paper reports on the implementation of carrier-selective tunnel oxide passivated rear contact for high-efficiency screen-printed large area n-type front junction crystalline Si solar cells. It is shown that the tunnel oxide grown in nitric acid at room temperature (25°C) and capped with n+ polysilicon layer provides excellent rear contact passivation with implied open-circuit voltage iVoc of 714mV and saturation current density J0b of 10.3 fA/cm2 for the back surface field region. The durability of this passivation scheme is also investigated for a back-end high temperature process. In combination with an ion-implanted Al2O3-passivated boron emitter and screen-printed front metal grids, this passivated rear contact enabled 21.2% efficient front junction Si solar cells on 239 cm2 commercial grade n-type Czochralski wafers.

Research Organization:: Georgia Inst. of Technology, Atlanta, GA (United States)

Sponsoring Organization:: USDOE Office of Energy Efficiency and Renewable Energy (EERE), Solar Energy Technologies Office (EE-4S)

DOE Contract Number:: EE0006336

OSTI ID:: 1293939

Journal Information:: Progress in Photovoltaics, Journal Name: Progress in Photovoltaics Journal Issue: 6 Vol. 24; ISSN 1062-7995

Publisher:: Wiley

Country of Publication:: United States

Language:: English

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