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Title: Method for formation of high quality back contact with screen-printed local back surface field

Patent ·
OSTI ID:1014722
 [1];  [2]
  1. Marietta, GA
  2. Atlanta, GA
+ Show Author Affiliations

A thin silicon solar cell having a back dielectric passivation and rear contact with local back surface field is described. Specifically, the solar cell may be fabricated from a crystalline silicon wafer having a thickness from 50 to 500 micrometers. A barrier layer and a dielectric layer are applied at least to the back surface of the silicon wafer to protect the silicon wafer from deformation when the rear contact is formed. At least one opening is made to the dielectric layer. An aluminum contact that provides a back surface field is formed in the opening and on the dielectric layer. The aluminum contact may be applied by screen printing an aluminum paste having from one to 12 atomic percent silicon and then applying a heat treatment at 750 degrees Celsius.

Research Organization:
Georgia Institute of Technology, Atlanta, GA (United States)
Sponsoring Organization:
USDOE
DOE Contract Number:
FC36-07GO17023
Assignee:
Georgia Tech Research Corporation (Atlanta, GA)
Patent Number(s):
7,842,596
Application Number:
US Patent Application 12/116,100
OSTI ID:
1014722
Country of Publication:
United States
Language:
English

References (6)

Investigations on laser-fired contacts for passivated rear solar cells
  • Schneiderlochner, E.; Grohe, A.; Ballif, C.
  • Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference 2002, Conference Record of the Twenty-Ninth IEEE Photovoltaic Specialists Conference, 2002. https://doi.org/10.1109/PVSC.2002.1190518
conference January 2002
Optimized aluminum back surface field techniques for silicon solar cells conference January 1997
Low-cost industrial technologies of crystalline silicon solar cells journal May 1997
Dielectric Rear Surface Passivation for Industrial Multicrystalline Silicon Solar Cells
  • Schultz, O.; Rentsch, J.; Grohe, A.
  • Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, 2006 IEEE 4th World Conference on Photovoltaic Energy Conference https://doi.org/10.1109/WCPEC.2006.279598
conference May 2006
The Effect of Low and High Temperature Anneals on the Hydrogen Content and Passivation of Si Surface Coated with SiO[sub 2] and SiN Films journal January 1999
Technology Route Towards Industrial Application of Rear Passivated Silicon Solar Cells conference May 2006

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