High mobility back-gated InAs/GaSb double quantum well grown on GaSb substrate

Journal Article · Mon Jan 19 00:00:00 EST 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4906589· OSTI ID:22415139

Nguyen, Binh-Minh; Yi, Wei; Noah, Ramsey; Thorp, Jacob; Sokolich, Marko ^[1]

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1. HRL Laboratories, 3011 Malibu Canyon Rd, Malibu, California 90265 (United States)

We report a backgated InAs/GaSb double quantum well device grown on GaSb substrate. The use of the native substrate allows for high materials quality with electron mobility in excess of 500 000 cm{sup 2}/Vs at sheet charge density of 8 × 10{sup 11} cm{sup −2} and approaching 100 000 cm{sup 2}/Vs near the charge neutrality point. Lattice matching between the quantum well structure and the substrate eliminates the need for a thick buffer, enabling large back gate capacitance and efficient coupling with the conduction channels in the quantum wells. As a result, quantum Hall effects are observed in both electron and hole regimes across the hybridization gap.

• OSTI ID: 22415139
• Journal Information: Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
CAPACITANCE
CHARGE DENSITY
ELECTRON MOBILITY
GALLIUM ANTIMONIDES
INDIUM ARSENIDES
QUANTUM WELLS
SHEETS
SUBSTRATES