High-mobility two-dimensional electron gas in InAlAs/InAs heterostructures grown on virtual InAs substrates by molecular-beam epitaxy

Journal Article · Sun Dec 31 23:00:00 EST 2006 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.2430403· OSTI ID:20883252

Lin, Y; Carlin, J A; Arehart, A R; Carlin, A M; Ringel, S A ^[1]

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1. Department of Electrical and Computer Engineering, Ohio State University, Columbus, Ohio 43210 (United States)

In{sub 0.8}Al{sub 0.2}As/InAs heterostructures were grown on virtual InAs substrates consisting of a relaxed InAs{sub y}P{sub 1-y} step-graded buffer grown on InP by molecular-beam epitaxy. Hall measurements revealed the presence of a high-mobility two-dimensional electron gas within the relaxed InAs layer, with a peak electron mobility of 133 000 cm{sup 2}/V s at 25 K. In contrast, identical InAlAs/InAs heterostructures grown directly on InAs buffers on InP showed only bulk transport characteristics. A combination of transport modeling and electron microscopy demonstrates that reduced dislocation scattering in the channel region is responsible for observing the two-dimensional transport within the relaxed InAs on graded InAsP. These results demonstrate the potential of achieving ultrahigh-speed InAs based high electron mobility transistors using relaxed, virtual InAs substrates on InP.

• OSTI ID: 20883252
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 1 Vol. 90; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM ARSENIDES
CRYSTAL GROWTH
DISLOCATIONS
ELECTRON GAS
ELECTRON MICROSCOPY
ELECTRON MOBILITY
HALL EFFECT
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM PHOSPHIDES
LAYERS
MOLECULAR BEAM EPITAXY
SCATTERING
SEMICONDUCTOR MATERIALS
SIMULATION
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0013-0065 K