Molecular beam epitaxy growth of high electron mobility InAs/AlSb deep quantum well structure

Journal Article · Sun Jul 07 04:00:00 EDT 2013 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4811443· OSTI ID:22122785

Juan, Wang; Guowei, Wang; Yingqiang, Xu; Junliang, Xing; Wei, Xiang; Bao, Tang; Yan, Zhu; Zhengwei, Ren; Zhenhong, He; Zhichuan, Niu ^[1]

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1. State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083 (China)

InAs/AlSb deep quantum well (QW) structures with high electron mobility were grown by molecular beam epitaxy (MBE) on semi-insulating GaAs substrates. AlSb and Al{sub 0.75}Ga{sub 0.25}Sb buffer layers were grown to accommodate the lattice mismatch (7%) between the InAs/AlSb QW active region and GaAs substrate. Transmission electron microscopy shows abrupt interface and atomic force microscopy measurements display smooth surface morphology. Growth conditions of AlSb and Al{sub 0.75}Ga{sub 0.25}Sb buffer were optimized. Al{sub 0.75}Ga{sub 0.25}Sb is better than AlSb as a buffer layer as indicated. The sample with optimal Al{sub 0.75}Ga{sub 0.25}Sb buffer layer shows a smooth surface morphology with root-mean-square roughness of 6.67 A. The electron mobility has reached as high as 27 000 cm{sup 2}/Vs with a sheet density of 4.54 Multiplication-Sign 10{sup 11}/cm{sup 2} at room temperature.

• OSTI ID: 22122785
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 1 Vol. 114; ISSN JAPIAU; ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALUMINIUM COMPOUNDS
ANTIMONY COMPOUNDS
ATOMIC FORCE MICROSCOPY
BUFFERS
CRYSTAL DEFECTS
DENSITY
ELECTRON MOBILITY
GALLIUM ARSENIDES
INDIUM ARSENIDES
INTERFACES
LAYERS
MOLECULAR BEAM EPITAXY
QUANTUM WELLS
SEMICONDUCTOR MATERIALS
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
TRANSMISSION ELECTRON MICROSCOPY