Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Electrical and Computer Engineering, The Johns Hopkins University, Baltimore, Maryland 21218 (United States)
We report on Gallium Nitride-based tunneling hot electron transistor amplifier with common-emitter current gain greater than 1. Small signal current gain up to 5 and dc current gain of 1.3 were attained in common-emitter configuration with collector current density in excess of 50 kA/cm{sup 2}. The use of a combination of 1 nm GaN/3 nm AlN layers as an emitter tunneling barrier was found to improve the energy collimation of the injected electrons. These results represent demonstration of unipolar vertical transistors in the III-nitride system that can potentially lead to higher frequency and power microwave devices.
- OSTI ID:
- 22415134
- Journal Information:
- Applied Physics Letters, Vol. 106, Issue 3; Other Information: (c) 2015 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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