Current gain above 10 in sub-10 nm base III-Nitride tunneling hot electron transistors with GaN/AlN emitter
- Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210 (United States)
- Department of Electrical and Computer Engineering, Johns Hopkins University, Baltimore, Maryland 21218 (United States)
We report on a tunneling hot electron transistor amplifier with common-emitter current gain greater than 10 at a collector current density in excess of 40 kA/cm{sup 2}. The use of a wide-bandgap GaN/AlN (111 nm/2.5 nm) emitter was found to greatly improve injection efficiency of the emitter and reduce cold electron leakage. With an ultra-thin (8 nm) base, 93% of the injected hot electrons were collected, enabling a common-emitter current gain up to 14.5. This work improves understanding of the quasi-ballistic hot electron transport and may impact the development of high speed devices based on unipolar hot electron transport.
- OSTI ID:
- 22591708
- Journal Information:
- Applied Physics Letters, Vol. 108, Issue 19; Other Information: (c) 2016 Author(s); Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Current gain in sub-10 nm base GaN tunneling hot electron transistors with AlN emitter barrier
Negative differential resistance in GaN tunneling hot electron transistors
Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer
Journal Article
·
Mon Jan 19 00:00:00 EST 2015
· Applied Physics Letters
·
OSTI ID:22591708
+2 more
Negative differential resistance in GaN tunneling hot electron transistors
Journal Article
·
Mon Nov 17 00:00:00 EST 2014
· Applied Physics Letters
·
OSTI ID:22591708
Electron density and currents of AlN/GaN high electron mobility transistors with thin GaN/AlN buffer layer
Journal Article
·
Mon Sep 15 00:00:00 EDT 2014
· Applied Physics Letters
·
OSTI ID:22591708
+4 more