Strong carrier localization effect in carrier dynamics of 585 nm InGaN amber light-emitting diodes
Journal Article
·
· Journal of Applied Physics
- Semiconductor Lighting R and D Center, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
Temperature dependence and time-resolved photoluminescence (TRPL) have been carried out to study carrier dynamics for 585 nm InGaN amber light-emitting diodes (LEDs). It is found that in InGaN amber LEDs, peak emission energy only shows a slight blueshift from 588 to 575 nm, as temperature increased from 10 K to 300 K. Moreover, radiative recombination lifetime has demonstrated independent of temperature based TRPL results. These two features indicate that a strong carrier localization effect plays a dominant role in carrier dynamics for InGaN amber LEDs. Also, activation energy of 40.3 meV is obtained through Arrhenius plot of PL intensity versus temperature.
- OSTI ID:
- 22413124
- Journal Information:
- Journal of Applied Physics, Journal Name: Journal of Applied Physics Journal Issue: 7 Vol. 117; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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